MOSFET N-Kênh 650V SiC 70A 30mOhm TrenchMOS ROHM Semiconductor SCT3030ALGC11
Hãng sản xuất: ROHM Semiconductor Model: SCT3030ALGC11 - Liên hệ
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TP. Hà Nội: (024) 35.381.269
TP. Đà Nẵng: (023) 63.747.711
TP. Bắc Ninh: (0222)730.39.68
TP. HCM: (028) 38.119.636
Fall Time: 27 ns
Rise Time: 41 ns
Technology: SiC
Unit Weight: 6 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 104 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 262 W
Vgs - Gate-Source Voltage: - 4 V, + 22 V
Typical Turn-On Delay Time: 22 ns
Typical Turn-Off Delay Time: 48 ns
Id - Continuous Drain Current: 70 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 9.4 S
Rds On - Drain-Source Resistance: 39 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 5.6 V
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